Semiconductor device and method of manufacture thereof, circuit board and electronic instrument

ABSTRACT

A method of manufacturing a semiconductor device comprises: a first step of interposing a thermosetting anisotropic conductive material  16  between a substrate  12  and a semiconductor chip  20;  a second step in which pressure and heat are applied between the semiconductor chip  20  and the substrate  12,  an interconnect pattern  10  and electrodes  22  are electrically connected, and the anisotropic conductive material  16  is spreading out beyond the semiconductor chip  20  and is cured in the region of contact with the semiconductor chip  20;  and a third step in which the region of the anisotropic conductive material  16  other than the region of contact with the semiconductor chip  20  is heated.

TECHNICAL FIELD

[0001] The present invention relates to a semiconductor device andmethod of manufacture thereof, and to a circuit board and an electronicinstrument.

BACKGROUND ART

[0002] In recent years, with the increasing compactness of electronicinstruments, semiconductor device packages adapted to high densitymounting are in demand. In response to this, surface mounting packagessuch as a ball grid array (BGA) and a chip scale/size package (CSP) havebeen developed. In a surface mounting package, a substrate may be usedwhich has formed thereon an interconnect pattern for connection to asemiconductor chip.

[0003] In a conventional surface mounting package, since there is a stepof providing a protective film to protect the interconnect pattern andso forth, it is has been difficult to improve the productivity.

[0004] The present invention solves this problem, and has as itsobjective the provision of a method of manufacturing a semiconductordevice and a semiconductor device manufactured by the method, of acircuit board and of an electronic instrument, having excellentreliability and productivity.

DISCLOSURE OF THE INVENTION

[0005] (1) A method of manufacturing a semiconductor device of thepresent invention comprises:

[0006] a first step of interposing an adhesive between a surface of asubstrate on which an interconnect pattern is formed and a surface of asemiconductor chip on which electrodes are formed;

[0007] a second step of applying energy between the semiconductor chipand the substrate, electrically connecting the interconnect pattern andthe electrodes, and making adhesive properties of the adhesive effectivein the region of contact with the semiconductor chip while the adhesivespreading out beyond the semiconductor chip; and

[0008] a third step of applying energy to the region of the adhesiveother than the region of contact with the semiconductor chip.

[0009] (2) In this method of manufacturing a semiconductor device,

[0010] the adhesive may be thermosetting;

[0011] the energy applied in the second step may be pressure and heat;and

[0012] the energy applied in the third step may be heat.

[0013] The adhesive is cured in the region of contact with thesemiconductor chip, and thereafter, the region other than the region ofcontact is heated and cured. Thus the adhesive is also cured in theregion where it spreads out beyond the semiconductor chip. By means ofthis, the possibility of the adhesive coming apart from the substrateand allowing the ingress of water, leading to migration of theinterconnect pattern can also be prevented. Since the adhesive is cured,the inclusion of water can be prevented.

[0014] (3) In this method of manufacturing a semiconductor device, theinterconnect pattern and the electrodes may be electrically connected byconductive particles dispersed in the adhesive.

[0015] Since the interconnect pattern and electrodes are electricallyconnected by the conductive particles, a semiconductor device can bemanufactured by a method of excellent reliability and productivity.

[0016] (4) In this method of manufacturing a semiconductor device,before the first step, the adhesive may be previously disposed on thesurface of the semiconductor chip on which the electrodes are formed.

[0017] (5) In this method of manufacturing a semiconductor device,before the first step, the adhesive may be previously disposed on thesurface of the substrate on which the interconnect pattern is formed.

[0018] (6) In this method of manufacturing a semiconductor device, inthe third step, energy may be applied to a portion of the adhesive atwhich curing is not completed in the second step.

[0019] (7) In this method of manufacturing a semiconductor device, inthe third step, the adhesive may be heated by a heating jig.

[0020] (8) In this method of manufacturing a semiconductor device, anonadhesive layer having high nonadhesive properties to the adhesive maybe interposed between the heating jig and the adhesive, and the adhesiveis heated.

[0021] (9) In this method of manufacturing a semiconductor device, theheating jig may be provided with the nonadhesive layer.

[0022] (10) In this method of manufacturing a semiconductor device, thenonadhesive layer may be disposed on the adhesive.

[0023] (11) In this method of manufacturing a semiconductor device, inthe third step, energy may be applied to the adhesive without contactingthe adhesive.

[0024] (12) This method of manufacturing a semiconductor device mayfurther comprise:

[0025] a reflow step in which solder balls connecting to theinterconnect pattern are formed on the substrate,

[0026] wherein the third step may be carried out in the reflow step.

[0027] (13) This method of manufacturing a semiconductor device mayfurther comprise:

[0028] a reflow step in which in addition to the semiconductor chip,another electronic component is electrically connected to theinterconnect pattern;

[0029] wherein the third step may be carried out in the reflow step.

[0030] (14) In this method of manufacturing a semiconductor device,after the third step, the substrate may be cut in a region other than aregion in which the adhesive contacts with the semiconductor chip.

[0031] (15) In this method of manufacturing a semiconductor device, inthe second step, the adhesive may be caused to surround at least a partof a lateral surface of the semiconductor chip.

[0032] Since the adhesive covers at least a part of the lateral surfaceof the semiconductor chip, not only is the semiconductor chip protectedfrom mechanical damage, but also water can be prevented from reachingthe electrodes, and corrosion can be prevented.

[0033] (16) In this method of manufacturing a semiconductor device, theadhesive may be provided before the first step at a thickness greaterthan the interval between the semiconductor chip and the substrate afterthe second step, and may spread out beyond the semiconductor chip byapplying pressure between the semiconductor chip and the substrate inthe second step.

[0034] (17) In this method of manufacturing a semiconductor device, theadhesive may include a shading material.

[0035] Since the adhesive includes a shading material, light can beprevented from reaching the surface of the semiconductor chip having theelectrodes, and so malfunction of the semiconductor chip can beprevented.

[0036] (18) A method of manufacturing a semiconductor device accordingto the present invention comprises:

[0037] a first step of interposing an adhesive between a surface of asubstrate on which an interconnect pattern is formed and a surface of asemiconductor chip on which electrodes are formed;

[0038] a second step of electrically connecting the interconnect patternand the electrodes, and curing the adhesive at least in a positionbetween the semiconductor chip and the substrate while the adhesivespreading out beyond the semiconductor chip; and

[0039] a third step of cutting the substrate in a region in which theadhesive spreads out beyond the semiconductor chip.

[0040] According to the present invention, the adhesive is cut after itis provided spreading out beyond the semiconductor chip. Thus, there isno requirement for accurate positioning with respect to thesemiconductor chip at the same size as the semiconductor chip. Since theadhesive is cut in the region spreading out beyond the semiconductorchip together with the substrate, the entire surface of the substrate iscovered by the adhesive so that migration and the like of theinterconnect pattern can be prevented.

[0041] (19) In this method of manufacturing a semiconductor device, theadhesive may be a thermosetting adhesive, and heat may be applied to theadhesive in the second step.

[0042] (20) In this method of manufacturing a semiconductor device, theadhesive may be a thermoplastic adhesive, and the adhesive may be cooledin the second step.

[0043] (21) In this method of manufacturing a semiconductor device, theinterconnect pattern and the electrodes may be electrically connected byconductive particles dispersed in the adhesive.

[0044] (22) In this method of manufacturing a semiconductor device,before the first step, the adhesive may be previously disposed on thesurface of the semiconductor chip on which the electrodes are formed.

[0045] (23) In this method of manufacturing a semiconductor device,before the first step, the adhesive may be previously disposed on thesurface of the substrate on which the interconnect pattern is formed.

[0046] (24) In this method of manufacturing a semiconductor device, inthe third step, a cutting position may be in a region outside an end ofthe interconnect pattern of the substrate.

[0047] (25) In this method of manufacturing a semiconductor device,

[0048] in the second step, the whole of the adhesive may be cured; and

[0049] in the third step, the cured adhesive may be cut.

[0050] Since the cured adhesive is cut, the cutting can be carried outeasily.

[0051] (26) In this method of manufacturing a semiconductor device, inthe second step, the adhesive may be caused to surround at least a partof a lateral surface of the semiconductor chip.

[0052] Since the adhesive covers at least a part of the lateral surfaceof the semiconductor chip, not only is the semiconductor chip protectedfrom mechanical damage, but also water can be prevented from reachingthe electrodes, and corrosion can be prevented.

[0053] (27) In this method of manufacturing a semiconductor device, theadhesive may be provided before the first step at a thickness greaterthan the interval between the semiconductor chip and the substrate afterthe second step, and may spread out beyond the semiconductor chip byapplying pressure between the semiconductor chip and the substrate inthe second step.

[0054] (28) In this method of manufacturing a semiconductor device, theadhesive may include a shading material.

[0055] Since the adhesive includes a shading material, light can beprevented from reaching the surface of the semiconductor chip having theelectrodes, and so malfunction of the semiconductor chip can beprevented.

[0056] (29) A semiconductor device according to the present inventioncomprises:

[0057] a semiconductor chip having electrodes; a substrate having aninterconnect pattern; and a thermosetting adhesive;

[0058] wherein the electrodes and the interconnect pattern areelectrically connected; and

[0059] wherein the adhesive is interposed between a surface of thesubstrate on which the interconnect pattern is formed and a surface ofthe semiconductor chip on which the electrodes are formed, and spreadsout beyond the semiconductor chip, and the whole of the adhesive iscured.

[0060] According to the present invention, the adhesive is also cured ina region outside that of contact with the semiconductor chip. Thus, thepossibility of the adhesive coming apart from the substrate and allowingthe ingress of water, leading to migration of the interconnect patterncan be prevented. Also, since all of the adhesive is cured, theinclusion of water can be prevented.

[0061] (30) In this semiconductor device, conductive particles may bedispersed in the adhesive to form an anisotropic conductive material.

[0062] Since the interconnect pattern and electrodes are electricallyconnected by the anisotropic conductive material, the reliability andproductivity are excellent.

[0063] (31) In this semiconductor device, the anisotropic conductivematerial may be provided to cover the whole of the interconnect pattern.

[0064] (32) In this semiconductor device, the adhesive may cover atleast a part of a lateral surface of the semiconductor chip.

[0065] Since the adhesive covers at least a part of the lateral surfaceof the semiconductor chip, the semiconductor chip is protected frommechanical damage. Additionally, since the semiconductor chip is coveredby the adhesive as far as a position remote from the electrodes, watercan be prevented from reaching the electrodes, and corrosion can beprevented.

[0066] (33) In this semiconductor device, the adhesive may include ashading material.

[0067] Since the adhesive includes a shading material, light can beprevented from reaching the surface of the semiconductor chip having theelectrodes, and so malfunction of the semiconductor chip can beprevented.

[0068] (34) A semiconductor device according to the present invention ismanufactured by the above-described method.

[0069] (35) On a circuit board according to the present invention, theabove-described semiconductor device is mounted.

[0070] (36) An electronic instrument according to the present inventionhas the above-described circuit board.

BRIEF DESCRIPTION OF THE DRAWINGS

[0071]FIGS. 1A to 1D show a method of manufacturing a semiconductordevice in accordance with a first embodiment relating to the presentinvention;

[0072]FIGS. 2A and 2B show a modification of the first embodiment;

[0073]FIGS. 3A and 3B show a method of manufacturing a semiconductordevice in accordance with a second embodiment relating to the presentinvention;

[0074]FIGS. 4A and 4B show a method of manufacturing a semiconductordevice in accordance with a third embodiment relating to the presentinvention;

[0075]FIGS. 5A and 5B show a method of manufacturing a semiconductordevice in accordance with a fourth embodiment of the present invention;

[0076]FIG. 6 shows a circuit board on which is mounted a semiconductordevice in accordance with the embodiment of the present invention; and

[0077]FIG. 7 shows an electronic instrument having a circuit board onwhich is mounted a semiconductor device in accordance with theembodiment of the present invention.

BEST MODE FOR CARRING OUT THE INVENTION

[0078] A preferred embodiment of the present invention will bedescribed, with reference to the drawings.

[0079] First Embodiment

[0080] A method of manufacturing a semiconductor device in accordancewith the first embodiment is shown in FIGS. 1A to 1D. In thisembodiment, a substrate 12 is used which has an interconnect pattern 10formed on at least one surface 18, as shown in FIG. 1A.

[0081] The substrate 12 may be a flexible substrate formed of an organicmaterial, a metal substrate formed of an inorganic material, or acombination of these. As a flexible substrate may be used a tapecarrier. If the electric conductivity of the substrate 12 is high, aninsulating film is formed between the substrate 12 and the interconnectpattern 10 and on inner surfaces of through holes 14. In addition, theinsulating film may also be formed on a surface of the substrateopposite to the surface on which the interconnect pattern 10 is formed.

[0082] The through holes 14 are formed in the substrate 12, and theinterconnect pattern 10 is formed on the substrate, covering the throughholes 14. Lands 17 for external electrodes are formed over the throughholes 14, as part of the interconnect pattern 10.

[0083] An anisotropic conductive material 16, as one example of anadhesive, is provided on a thus obtained substrate 12. In thedescription that follows, an anisotropic conductive material is given asan example of an adhesive. The anisotropic conductive material 16comprises an adhesive (binder) in which are dispersed conductiveparticles (conductive filler), and in some cases a dispersant is added.The anisotropic conductive material 16 could be previously formed as asheet that is affixed to the substrate 12, or it could equally well beprovided as a liquid on the substrate 12. The anisotropic conductivematerial 16 may be provided to be larger than a surface 24 of asemiconductor chip 20 on which electrodes 22 are provided, or may beprovided in a quantity to be smaller than the surface 24, thencompressed so as to spread out beyond the surface 24.

[0084] Alternatively, the anisotropic conductive material 16 may beprovided on the surface 24 of the semiconductor chip 20, in a quantityto be compressed so as to spread out beyond the surface 24. It should benoted that even if an adhesive not including conductive particles isused, the electrodes 22 and interconnect pattern 10 can be electricallyconnected.

[0085] In this embodiment, a thermosetting adhesive is used as theanisotropic conductive material, and the anisotropic conductive material16 may further include a shading material. As a shading material can beused, for example, a black dye or black pigment dispersed in an adhesiveresin.

[0086] As the adhesive may be used a thermosetting adhesive as typifiedby an epoxy type, or a photocurable adhesive as typified by an epoxy oracrylate type. Further, the type of adhesive cured by electron beam, ora thermoplastic (thermal adhesion) type of adhesive may equally be used.In the following description, if an adhesive other than thermosetting isused, the provision of energy should be substituted in place of theapplication of heat or pressure.

[0087] Next, the semiconductor chip 20 is mounted on the anisotropicconductive material 16, for example. In more detail, the semiconductorchip 20 is mounted such that the surface 24 of the semiconductor chip 20on which the electrodes 22 are formed faces the anisotropic conductivematerial 16. Moreover, the semiconductor chip 20 is disposed so that theeach electrode 22 is positioned over a land (not shown in the figures)for connection of the electrodes to the interconnect pattern 10. Itshould be noted that the semiconductor chip 20 may have the electrodes22 formed on two edges only, or may have the electrodes 22 formed onfour edges. The electrodes 22 are commonly in the form of projectionsmade of gold, solder or the like provided on aluminum pads. Theelectrodes 22 may be formed on the interconnect pattern 10 side in theform of such projections or projections formed by etching theinterconnect pattern 10.

[0088] By means of the above process, the anisotropic conductivematerial 16 is positioned between the surface 24 of the semiconductorchip 20 on which the electrodes 22 are formed and the surface 18 of thesubstrate 12 on which the interconnect pattern 10 is formed. A jig 30 isthen used to press a surface 26 of the semiconductor chip 20 which isopposite to the surface 24 on which the electrodes 22 are formed suchthat the semiconductor chip 20 is subjected to pressure in the directionof the substrate 12. Alternatively, pressure may be applied between thesemiconductor chip 20 and the substrate 12. Even if the anisotropicconductive material 16 as an adhesive is provided within the area of thesurface 24 of the semiconductor chip 20, the applied pressure causes itto spread out beyond the surface 24. The jig 30 has an internal heater32, and applies heat to the semiconductor chip 20. It should be notedthat considering the requirement as far as possible to apply heat alsoto the spread out portion of the anisotropic conductive material 16, thejig 30 used preferably has a greater plan area than the plan area of thesemiconductor chip 20. In this way, heat can easily be applied to theperiphery of the semiconductor chip 20.

[0089] Thus, as shown in FIG. 1B, the electrodes 22 of the semiconductorchip 20 and the interconnect pattern 10 are electrically connectedthrough the conductive particles of the anisotropic conductive material16. According to this embodiment, since the interconnect pattern 10 andelectrodes 22 are electrically connected through the anisotropicconductive material 16, a semiconductor device can be manufactured by amethod of excellent reliability and productivity.

[0090] Since heat is applied to the semiconductor chip 20 by the jig 30,the anisotropic conductive material 16 is cured in the region of contactwith the semiconductor chip 20. In the region not contacting thesemiconductor chip 20 or the region apart from the semiconductor chip20, heat does not reach the anisotropic conductive material 16, so thatthe curing is incomplete. The curing of these regions is carried out inthe following step.

[0091] As shown in FIG. 1C, solder 34 is provided within and around theperiphery of the through holes 14 in the substrate 12. A cream solder orthe like may be used to form the solder 34 by printing. Alternatively,pre-formed solder balls may be mounted in the above-described position.

[0092] The solder 34 is then heated in a reflow step, and solder balls36 are formed as shown in FIG. 1D. The solder balls 36 function asexternal electrodes. In this reflow step, not only the solder 34 butalso the anisotropic conductive material 16 is heated. This heat curesthe regions of the anisotropic conductive material 16 which are not yetcured. That is to say, of the anisotropic conductive material 16, theregion not contacting the semiconductor chip 20 or the region apart fromthe semiconductor chip 20, is cured in the reflow step of forming thesolder balls 36.

[0093] In the thus obtained semiconductor device 1, since the whole ofthe anisotropic conductive material 16 is cured, the possibility of theanisotropic conductive material 16 around the semiconductor chip 20coming apart from the substrate 12 and allowing the ingress of water,leading to migration of the interconnect pattern 10 is prevented. Sincethe whole of the anisotropic conductive material 16 is cured, theinclusion of water within the anisotropic conductive material 16 canalso be prevented.

[0094] Further in the semiconductor device 1, since the electrodes 22provided on the surface 24 of the semiconductor chip 20 are covered bythe anisotropic conductive material 16 which includes a shadingmaterial, light can be prevented from reaching this surface 24.Therefore, malfunction of the semiconductor chip 20 can be prevented.

[0095]FIGS. 2A and 2B show a modification of the first embodiment. Inthese modifications, the structure which is the same as in the firstembodiment is indicated by the same reference numerals, and descriptionof this structure and the effect of this structure is omitted. The sameis true for the following embodiments.

[0096] The step shown in FIG. 2A can be carried out after the step ofFIG. 1B and before the step of FIG. 1C. In more detail, of theanisotropic conductive material 16, the region not contacting thesemiconductor chip 20 and the region apart from the semiconductor chip20, are heated by a heating jig 38. The heating jig 38 is preferablyprovided with a nonadhesive layer 39 formed of Teflon or the like havinghigh nonadhesive properties to the anisotropic conductive material 16that is an example of an adhesive, so that uncured anisotropicconductive material 16 does not adhere thereto. Alternatively, thenonadhesive layer 39 may be provided on the anisotropic conductivematerial 16 that is an example of an adhesive. Further, the anisotropicconductive material 16 as an example of an adhesive may be heated by anon-contact method. By this means, of the anisotropic conductivematerial 16, the region not contacting the semiconductor chip 20 and theregion apart from the semiconductor chip 20 can be cured. In place of ajig, a hot air blower or optical heater capable of localized heating maybe used.

[0097] Alternatively, as shown in FIG. 2B, after the step of FIG. 1B andbefore the step of FIG. 1C, a reflow step may be carried out toelectrically connect an electronic component 40 distinct from thesemiconductor chip 20 to the interconnect pattern 10. By means of thisreflow step, of the anisotropic conductive material 16, the region notcontacting the semiconductor chip 20 and the region apart from thesemiconductor chip 20 is heated and cured. It should be noted that asthe electronic component 40 may be cited for example a resistor,capacitor, coil, oscillator, filter, temperature sensor, thermistor,varistor, variable resistor, or a fuse.

[0098] According to these modifications also, all of the anisotropicconductive material 16 can be cured, and the possibility of theanisotropic conductive material 16 coming apart from the substrate 12and allowing the ingress of water, leading to migration of theinterconnect pattern 10 can be prevented. Since the whole of theanisotropic conductive material 16 is cured, the inclusion of water canalso be prevented.

[0099] After the above described steps, the substrate 12 may be cut inthe region in which the anisotropic conductive material 16 being anexample of an adhesive spreads beyond the semiconductor chip 20.

[0100] This embodiment has been described with a substrate withinterconnects on one surface only as the substrate 12, but is notlimited to this, and a double-sided interconnect substrate ormulti-layer interconnect may be used. In this case, in stead ofdisposing solder in the through holes, solder balls may be formed onlands provided on the surface opposite to that on which thesemiconductor chip is mounted. In place of solder balls other conductiveprojections may be used. The connection between the semiconductor chipand the substrate may be carried out by wire bonding. These observationsapply equally to the following embodiments.

[0101] In this embodiment, not only a thermosetting adhesive, but alsoan anisotropic conductive material 16 being an example of athermoplastic adhesive may be used. A thermoplastic adhesive can behardened by cooling. Alternatively, an adhesive which can be hardened byradiation such as ultraviolet light may be used. This applies equally tothe following embodiments.

[0102] Second Embodiment

[0103] A method of manufacturing the semiconductor device in accordancewith the second embodiment is shown in FIGS. 3A and 3B. This embodimentis carried out following on from the first embodiment.

[0104] More specifically, in this embodiment, following on from the stepof FIG. 1D, the anisotropic conductive material 16 and substrate 12 areheld by a fixed blade 41, and cut by a movable blade 42 to a sizeslightly larger than the semiconductor chip 20, as shown in FIG. 3A,yielding a semiconductor device 2 shown in FIG. 3B. The cutting means isnot limited thereto, and any other available cutting means and holdingmeans can be applied. Since the substrate 12 is cut together with theanisotropic conductive material 16, the cut through the two is coplanar,and the entire surface of the substrate 12 is covered by the anisotropicconductive material 16. Therefore, the interconnect pattern 10 is notexposed, and moisture is prevented from reaching the interconnectpattern 10 and causing migration.

[0105] According to this embodiment, since the anisotropic conductivematerial 16 is cut, it does not require to be previously cut to the samesize as the semiconductor chip 20 or slightly larger, and accuratepositioning with respect to the semiconductor chip 20 is not required.

[0106] It should be noted that this embodiment is an example of theanisotropic conductive material 16 and substrate 12 being cut after thesolder balls 36 are formed, but the timing of the cut is independent ofthe formation of the solder balls 36, as long as it is at least afterthe semiconductor chip 20 has been mounted on the anisotropic conductivematerial 16. However, the anisotropic conductive material 16 ispreferably cured at least in the region of contact with thesemiconductor chip 20. In this case, mispositioning of the semiconductorchip 20 and interconnect pattern 10 can be prevented. If the anisotropicconductive material 16 is cured rather than uncured in the location ofthe cut, the cutting operation will be easier.

[0107] It should be noted that when the substrate 12 is cut, the wholeof the anisotropic conductive material 16 being an example of anadhesive may be cured in a single operation. For example, when theelectrodes 22 of the semiconductor chip 20 and the interconnect pattern10 are electrically connected, to the whole of the anisotropicconductive material 16 being an example of an adhesive heat may beapplied or cooling applied. When a thermosetting adhesive is used, a jigmay be used which contacts both of the semiconductor chip 20 and theadhesive spreading out beyond the semiconductor chip 20. Alternatively,heating may be applied by means of an oven.

[0108] Third Embodiment

[0109] A method of manufacturing a semiconductor device in accordancewith the third embodiment is shown in FIGS. 4A and 4B show. In thisembodiment, the substrate 12 of the first embodiment is used, and on thesubstrate 12 is formed a protective layer 50. The protective layer 50 issuch as to cover the interconnect pattern 10, preventing contact withwater, and for example solder resist may be used.

[0110] The protective layer 50 is formed around a region 52 that islarger in extent than the region in which the semiconductor chip 20 ismounted on the substrate 12. That is to say, the region 52 is largerthan the surface 24 of the semiconductor chip 20 having the electrodes22, and within this region 52 the lands (not shown in the drawings) forconnection to the electrodes 22 of the semiconductor chip 20 are formedon the interconnect pattern 10. Alternatively, the protective layer 50may be formed to avoid at least portions for electrical connection tothe electrode 20 of the semiconductor chip 20.

[0111] On such a substrate 12 an anisotropic conductive material 54(adhesive) of a material which can be selected as the anisotropicconductive material 16 of the first embodiment is provided. It should benoted that the anisotropic conductive material 54 does not necessarilycontain a shading material, but if it does contain a shading materialthen the same effect as in the first embodiment is obtained.

[0112] In this embodiment, the anisotropic conductive material 54 isprovided from the region of mounting of the semiconductor chip 20 to theprotective layer 50. That is to say, the anisotropic conductive material54 covers the interconnect pattern 10 and substrate 12 in the region 52in which the protective layer 50 is not formed, and is also formed tooverlap the edge of the protective layer 50 surrounding the region 52.Alternatively, the anisotropic conductive material 54 being an exampleof an adhesive may be provided on the semiconductor chip 20 side. Inmore detail, the description in the first embodiment applies.

[0113] The semiconductor chip 20 is then pressed toward the substrate 12and heat is applied by the jig 30, as shown in FIG. 4A. Alternatively,pressure is applied at least between the semiconductor chip 20 and thesubstrate 12. In this way, the electrodes 22 of the semiconductor chip20 and the interconnect pattern 10 are electrically connected, as shownin FIG. 4B. Thereafter, in the same way as in the steps shown in FIGS.1C and 1D, solder balls are formed, and the semiconductor device isobtained.

[0114] According to this embodiment, the anisotropic conductive material54 is not only formed in the region 52 in which the protective layer 50is not formed, but also formed to overlap the edge of the protectivelayer 50 surrounding the region 52. Consequently, there is no gapbetween the anisotropic conductive material 54 and the protective layer50, and the interconnect pattern 10 is not exposed, so that migrationcan be prevented.

[0115] It should be noted that in this embodiment, it is preferable thatthe anisotropic conductive material 54 is cured also in the regionspreading beyond the semiconductor chip 20. This curing step can becarried out in the same way as in the first embodiment.

[0116] Fourth Embodiment

[0117] A method of manufacturing a semiconductor device in accordancewith a fourth embodiment of the present invention is shown in FIGS. 5Aand 5B. In this embodiment, the substrate 12 of the first embodiment isused, and an anisotropic conductive material 56 (adhesive) is providedon the substrate 12. The difference between this embodiment and thefirst embodiment is in the thickness of the anisotropic conductivematerial 56. That is to say, as shown in FIG. 5A, in this embodiment thethickness of the anisotropic conductive material 56 is greater than thethickness of the anisotropic conductive material 16 shown in FIG. 1A.More specifically, the anisotropic conductive material 56 is thickerthan the interval between the surface 24 of the semiconductor chip 20having the electrodes 22 and the interconnect pattern 10 formed on thesubstrate 12. The anisotropic conductive material 56 is at leastslightly larger than the semiconductor chip 20. It should be noted thatit is sufficient for either of these thickness and size conditions to besatisfied.

[0118] As shown in FIG. 5A, the semiconductor chip 20 is then pressedtoward the substrate 12 and heat is applied by the jig 30, for example.By doing this, the anisotropic conductive material 56 surrounds a partor all of a lateral surface 28 of the semiconductor chip 20, as shown inFIG. 5B. Thereafter, solder balls are formed in the same way as in thesteps shown in FIGS. 1C and 1D, and the semiconductor device isobtained.

[0119] According to this embodiment, since at least part of the lateralsurface 28 of the semiconductor chip 20 are covered by the anisotropicconductive material 56, the semiconductor chip 20 is protected frommechanical damage. Moreover, since the anisotropic conductive material56 covers as far as a position removed from the electrodes 22, corrosionof the electrodes 22 and so on can be prevented.

[0120] Although the above embodiment has been described principally interms of a chip size/scale package (CSP) of face-down bonding (FDB), thepresent invention can be applied to any semiconductor device to whichFDB is applied, such as a semiconductor device to which Chip on Film(COF) or Chip on Board (COB) is applied, or the like.

[0121] A circuit board 1000 on which is mounted a semiconductor device1100 fabricated by the method of the above described embodiment is shownin FIG. 6. An organic substrate such as a glass epoxy substrate or thelike is generally used for the circuit board 1000. On the circuit board1000, an interconnect pattern of for example copper is formed to providea desired circuit. Then electrical connection is achieved by mechanicalconnection of the interconnect pattern and external electrodes of thesemiconductor device 1100.

[0122] It should be noted that the semiconductor device 1100 has amounting area which can be made as small as the area for mounting a barechip, and therefore when this circuit board 1000 is used in anelectronic instrument, the electronic instrument itself can be made morecompact. Moreover, a larger mounting space can be obtained within thesame area, and therefore higher functionality is possible.

[0123] Then as an example of an electronic instrument equipped with thiscircuit board 1000, a notebook personal computer 1200 is shown in FIG.7.

[0124] It should be noted that, whether active components or passivecomponents, the present invention can be applied to varioussurface-mounted electronic components. As electronic components, forexample, may be cited resistors, capacitors, coils, oscillators,filters, temperature sensors, thermistors, varistors, variableresistors, and fuses.

1. A method of manufacturing a semiconductor device comprising: a firststep of interposing an adhesive between a surface of a substrate onwhich an interconnect pattern is formed and a surface of a semiconductorchip on which electrodes are formed; a second step of applying energybetween said semiconductor chip and said substrate, electricallyconnecting said interconnect pattern and said electrodes, and makingadhesive properties of said adhesive effective in the region of contactwith said semiconductor chip while said adhesive spreading out beyondsaid semiconductor chip; and a third step of applying energy to theregion of said adhesive other than the region of contact with saidsemiconductor chip.
 2. The method of manufacturing a semiconductordevice as defined in claim 1, wherein: said adhesive is thermosetting;said energy applied in the second step is pressure and heat; and saidenergy applied in the third step is heat.
 3. The method of manufacturinga semiconductor device as defined in claim 1, wherein said interconnectpattern and said electrodes are electrically connected by conductiveparticles dispersed in said adhesive.
 4. The method of manufacturing asemiconductor device as defined in claim 1, wherein before the firststep, said adhesive is previously disposed on the surface of saidsemiconductor chip on which said electrodes are formed.
 5. The method ofmanufacturing a semiconductor device as defined in claim 1, whereinbefore the first step, said adhesive is previously disposed on thesurface of said substrate on which said interconnect pattern is formed.6. The method of manufacturing a semiconductor device as defined inclaim 1, wherein in the third step, energy is applied to a portion ofsaid adhesive at which curing is not completed in the second step. 7.The method of manufacturing a semiconductor device as defined in claim2, wherein in the third step, said adhesive is heated by a heating jig.8. The method of manufacturing a semiconductor device as defined inclaim 7, wherein a nonadhesive layer having high nonadhesive propertiesto said adhesive is interposed between said heating jig and saidadhesive, and said adhesive is heated.
 9. The method of manufacturing asemiconductor device as defined in claim 8, wherein said heating jig isprovided with said nonadhesive layer.
 10. The method of manufacturing asemiconductor device as defined in claim 8, wherein said nonadhesivelayer is disposed on said adhesive.
 11. The method of manufacturing asemiconductor device as defined in claim 1, wherein in the third step,energy is applied to said adhesive without contacting said adhesive. 12.The method of manufacturing a semiconductor device as defined in claim1, further comprising: a reflow step in which solder balls connecting tosaid interconnect pattern are formed on said substrate, wherein thethird step is carried out in said reflow step.
 13. The method ofmanufacturing a semiconductor device as defined in claim 1, furthercomprising: a reflow step in which in addition to said semiconductorchip, another electronic component is electrically connected to saidinterconnect pattern, wherein the third step is carried out in saidreflow step.
 14. The method of manufacturing a semiconductor device asdefined in claim 1, wherein after the third step, said substrate is cutin a region other than a region in which said adhesive contacts withsaid semiconductor chip.
 15. The method of manufacturing a semiconductordevice as defined in claim 1, wherein in the second step, said adhesiveis caused to surround at least a part of a lateral surface of saidsemiconductor chip.
 16. The method of manufacturing a semiconductordevice as defined in claim 15, wherein said adhesive is provided beforethe first step at a thickness greater than the interval between saidsemiconductor chip and said substrate after the second step, and spreadsout beyond said semiconductor chip by applying pressure between saidsemiconductor chip and said substrate in the second step.
 17. The methodof manufacturing a semiconductor device as defined in claim 1, whereinsaid adhesive includes a shading material.
 18. A method of manufacturinga semiconductor device, comprising: a first step of interposing anadhesive between a surface of a substrate on which an interconnectpattern is formed and a surface of a semiconductor chip on whichelectrodes are formed; a second step of electrically connecting saidinterconnect pattern and said electrodes, and curing said adhesive atleast in a position between said semiconductor chip and said substratewhile said adhesive spreading out beyond said semiconductor chip; and athird step of cutting said substrate in a region in which said adhesivespreads out beyond said semiconductor chip.
 19. The method ofmanufacturing a semiconductor device as defined in claim 18, whereinsaid adhesive is a thermosetting adhesive, and heat is applied to saidadhesive in the second step.
 20. The method of manufacturing asemiconductor device as defined in claim 18, wherein said adhesive is athermoplastic adhesive, and said adhesive is cooled in the second step.21. The method of manufacturing a semiconductor device as defined inclaim 18, wherein said interconnect pattern and said electrodes areelectrically connected by conductive particles dispersed in saidadhesive.
 22. The method of manufacturing a semiconductor device asdefined in claim 18, wherein before the first step, said adhesive ispreviously disposed on the surface of said semiconductor chip on whichsaid electrodes are formed.
 23. The method of manufacturing asemiconductor device as defined in claim 18, wherein before the firststep, said adhesive is previously disposed on the surface of saidsubstrate on which said interconnect pattern is formed.
 24. The methodof manufacturing a semiconductor device as defined in claim 18, whereinin the third step, a cutting position is in a region outside an end ofsaid interconnect pattern of said substrate.
 25. The method ofmanufacturing a semiconductor device as defined in claim 18, wherein: inthe second step, the whole of said adhesive is cured, and in the thirdstep, said cured adhesive is cut.
 26. The method of manufacturing asemiconductor device as defined in claim 18, wherein in the second step,said adhesive is caused to surround at least a part of a lateral surfaceof said semiconductor chip.
 27. The method of manufacturing asemiconductor device as defined in claim 26, wherein said adhesive isprovided before the first step at a thickness greater than the intervalbetween said semiconductor chip and said substrate after the secondstep, and spreads out beyond said semiconductor chip by applyingpressure between said semiconductor chip and said substrate in thesecond step.
 28. The method of manufacturing a semiconductor device asdefined in claim 18, wherein said adhesive includes a shading material.29. A semiconductor device, comprising: a semiconductor chip havingelectrodes; a substrate having an interconnect pattern; and athermosetting adhesive; wherein said electrodes and said interconnectpattern are electrically connected; and wherein said adhesive isinterposed between a surface of said substrate on which saidinterconnect pattern is formed and a surface of said semiconductor chipon which said electrodes are formed, and spreads out beyond saidsemiconductor chip, and the whole of said adhesive is cured.
 30. Thesemiconductor device as defined in claim 29, wherein conductiveparticles are dispersed in said adhesive to form an anisotropicconductive material.
 31. The semiconductor device as defined in claim30, wherein said anisotropic conductive material is provided to coverthe whole of said interconnect pattern.
 32. The semiconductor device asdefined in claim 29, wherein said adhesive covers at least a part of alateral surface of said semiconductor chip.
 33. The semiconductor deviceas defined in claim 29, wherein said adhesive includes a shadingmaterial.
 34. A semiconductor device manufactured by the method asdefined in any of claims 1 to
 28. 35. A circuit board on which ismounted the semiconductor device as defined in any of claims 29 to 33.36. An electronic instrument having the circuit board as defined inclaim 35.